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Can program/GSM test SIM card, customized requirements are available

Delivery term:The date of payment from buyers deliver within days

Price:
Negotiable
minimum:
Total supply:
Delivery term:
The date of payment from buyers deliver within days
seat:
Beijing
Validity to:
Long-term effective
Last update:
2017-07-09 11:13
Browse the number:
127

Company Profile

Green Card (Shenzhen) Co. Ltd: Contact:
greencard(Mr.); Telephone:; Area:
Beijing; Address:
5F, West B2 Building, Anle Industrial District, Hangcheng Road, Bao'an, Shenzhen, Guangdong, China (518102); Website: http://greencard.netgagerdesign.com/

Product details

Model Number: 2.5G GSM Test SIM card Brand Name: GRcard Key Specifications/Special Features: Specifications:Card type: 2.5G GSM, CDMA, 3G EVDO, WCDMA, TD-SCDMA, 4G TD-LTE test cardCapacity: 16KB, 32KB, 64KB, 128KB, 256KBPlug-in card size:Standard card: 25*15mm (2FF)

Micro card: 15*12mm (3FF)

Nano card: 12* 9mm (4FF)

Main functions: mobile phone test with the phone tester

Contact: 6-pin or 8-pin

Suitable equipment: Agilent, Anritsu, R andS, StarPoint

Network compatibility: GSM, CDMA2000, USIM, ISIM, RUIM

Browser: WIB, S atT, Celltick

Form factor: ISO, half SIM, Quarter SIM, 10 chip, plug-in, 4FF

Compliant to IS-820 Addendum, GSM11.11, GSM11.14, GSM03.48. GSM03.40

Chip parameters:

Grcard 2.5GHz Test IC card chip products are high performance IC used in smartcard
In the chip there are 8 bit micro-processor48K byte program memorizer (MASK ROM), 256 byte internal RAM(SRAM)
1K byte outside RAM (SRAM), 32KB byte data memorizer (EEPROM) and the card body material is ABS or PVC

Main character of chip:

CPU: 8-bit CPU

Memorizer (32KB):

256 byte inner RAM (256 x 8-bit SRAM)
1K byte outer RAM (1024 x 8-bit SRAM)
48K byte program memorizer (48Kx 8-bit ROM)
32K byte data memorizer (32K x 8-bit EEPROM

EEPROM (32KB):

32KEEPROM as data memorizer
Single byte read, write and wipe
Multi bytes storage (1 byte to 1 page)
Program clock come from vibrate clock that generated by chip itself
At the normal temperature, can proceed at least 100,000 times eraseand write operations
EEPROM data endurance more than ten years
EEPROM program voltage generated in the chip

Serial I/O interface: